The Journal of Scanning Microscopies
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Contents Volume 21, Number 3, MayJune (1999)
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Cover micrograph: Surface potential microscopy image of Ga-Face GaN grown by molecular beam epitaxy. The large piezoelectric coefficients of GaN together with strain introduced by crystalline imperfections produce measurable variation in piezoelectrially induced electric fields and potentials around these defects. The size of the observed features correspond to the characteristic Debye length of the semiconductor and are attributed to charge screening of both the permanent polarization and piezoelectrically enhanced surface charge. The boundaries of the defects as determined by atomic force microscopy are overlaid on the surface potential image for clarity. The image size is 5 * 5 µm with a z-scale of 150 mV. Data was taken with a Digital Instruments Bioscope and Nanoscope IIIa controller with extender electronics. Cover micrograph submitted by P. M. Bridger et al. from the abstract "Electric Force Microscopy of Induced Charges and Surface Potentials in GaN Modified by Light and Strain," appearing in the March/April issue (Proceedings of SCANNING 99) of Volume 21 (1999).